| PART |
Description |
Maker |
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| PH1214-100EL |
1200-1400 MHz,100 W, 2 ms pulse,radar pulsed power transistor
|
MA-Com
|
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CM1400DU-24NF |
Mega Power Dual⑩ IGBTMOD 1400 Amperes/1200 Volts
Mega Power Dual IGBTMOD 1400 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| 1214-370M |
370 Watts - 50 Volts, 330 ms, 10% Radar 1200 - 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| FP-512 |
Wideband RF/Pulse Transformer 1-1200 MHz
|
SIRENZA MICRODEVICES
|
| QRS1450001 |
Fast Recovery Diode Module (500 Amps/1400 Volts) 250 A, 1400 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| F1827RD1200 F1842CAD1600 F1842CAD400 F1892CCD1200 |
25 A, 1200 V, SILICON, RECTIFIER DIODE MODULE-3
40 A, 1600 V, SILICON, RECTIFIER DIODE MODULE-3
Power Module 40 A, 400 V, SILICON, RECTIFIER DIODE
90 A, 1200 V, SILICON, RECTIFIER DIODE MODULE-3
90 A, 400 V, SILICON, RECTIFIER DIODE
90 A, 1000 V, SILICON, RECTIFIER DIODE
90 A, 1600 V, SILICON, RECTIFIER DIODE
40 A, 1400 V, SILICON, RECTIFIER DIODE
90 A, 1400 V, SILICON, RECTIFIER DIODE
55 A, 400 V, SILICON, RECTIFIER DIODE
40 A, 600 V, SILICON, RECTIFIER DIODE
25 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
55 A, 1000 V, SILICON, RECTIFIER DIODE
|
Crydom, Inc.
CRYDOM CORP
|
|
